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Issue Date
Title
Author(s)
2005-06-01
Effect of point defect injection on diffusion of boron in silicon and silicon–germanium in the presence of carbon
Karunaratne, M. S. A
;
Willoughby, A F W
;
Bonar, J M
;
Zhang, J
;
Ashburn, P
2005
Interdiffusion of niobium and molybdenum in nickel between 900-1300 C
Karunaratne, M. S. A
;
Reed, R. C
2005-03-21
Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si/sub 1-x/Ge/sub x
Mubarek, HAW El
;
Bonar, J M
;
Dilliway, G D
;
Wang, Y
;
Hemment, Peter L F
;
Willoughby, A F
;
Ashburn, Peter
;
Karunaratne, M. S. A
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Author
2
Bonar, J M
1
Ashburn, P
1
Ashburn, Peter
1
Dilliway, G D
1
Hemment, Peter L F
1
Mubarek, HAW El
1
Reed, R. C
1
Wang, Y
1
Willoughby, A F
1
Willoughby, A F W
.
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Subject
1
Boron
1
carbon
1
defect injection
1
Diffusion processes
1
Effect
1
Electron microscopy
1
Fluorine
1
Germanium alloys
1
Heterojunction bipolar transistors
1
Interdiffusion
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