Please use this identifier to cite or link to this item:
Title: Diffusion and activation of dopants in silicon and advanced silicon-based materials
Authors: Pichler, Peter
Ortiz, Christophe J
Colombeau, Benjamin
Cowern, Nicholas E B
Lampin, Evelyne
Uppal, Suresh
Karunaratne, M. S. A
Keywords: Diffusion
advanced silicon-based materials
Issue Date: 17-Aug-2006
Publisher: IOP Publishing
Citation: 8
Series/Report no.: Physica Scripta;Vol 2006 Issue T126 Pages 89
Abstract: A quantitative description of the transient diffusion and activation of boron during post-implantation annealing steps is one of the most challenging tasks in the simulation of silicon doping processes. In industrially relevant situations, simulations needs to address diffusion at extrinsic concentrations, the agglomeration of self-interstitials, and the formation of boron-interstitial clusters. This paper describes the experimental work performed or used to calibrate model parameters as independently as possible. The combined model is then applied to ultra-shallow junction formation by annealing boron implanted into crystalline or preamorphized silicon. In comparison to bulk silicon, much less is known about diffusion of dopants in SiGe and germanium which are considered as technological options for future technology nodes. Therefore, dedicated experiments were performed to clarify open points in the diffusion behaviour of dopants in these materials.
URI: http://localhost:8080/jspui/handle/123456789/260
ISSN: 1402-4896
Appears in Collections:Research Papers - Department of Civil Engineering
Research Papers - Department of Materials Engineering
Research Papers - SLIIT Staff Publications

Files in This Item:
File Description SizeFormat 
Diffusion and activation of dopants.pdf
  Until 2050-12-31
1.13 MBAdobe PDFView/Open Request a copy

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.