Research Papers - Dept of Information Technology

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    Eco-friendly bismuth halide chalcogenide perovskites for solar energy harvesting
    (Royal Society of Chemistry, 2025-03-04) Don Muditha Akmal, U. K; Hu, D; Wijesekara Abeygunawardhana, P.K; Sewvandi, G. A
    The quest to eliminate lead (Pb) content in perovskite photovoltaic materials has significantly shifted focus towards identifying viable Pb-free alternatives. This study provides a comprehensive theoretical investigation of CH3NH3BiI2Se and CH3NH3BiI2S as Pb alternative candidates. Density Functional Theory (DFT) calculations and the solar cell capacitance simulator (SCAPS) were used. The DFT analysis reveals that both CH3NH3BiI2Se and CH3NH3BiI2S possess indirect band gaps of 1.35 eV and 1.39 eV, respectively. CH3NH3BiI2Se demonstrates a higher absorption coefficient, stronger absorption in the UV-visible regions, a broader absorption spectrum and better charge carrier mobilities compared to CH3NH3BiI2S. CH3NH3BiI2Se and CH3NH3BiI2S based solar cells which show 24.06% and 21.85% power conversion efficiencies (PCEs), respectively. This study emphasizes the potential of CH3NH3BiI2Se as a promising bismuth mixed halide chalcogenide compound for the development of sustainable perovskite solar cells. The findings provide a foundation for the guided design of novel bismuth chalcogenide compounds for optoelectronic applications and experimental studies.
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    Tuning of Optoelectronic Properties of Chalcohalides by Tailoring Pnictogen Composition for Sustainable Photovoltaics
    (John Wiley and Sons Inc, 2025-08) Hu, D; Abeygunawardhana, P.K.W; Asha, G
    This study investigates Sb1-xBixSeI pnictogen chalcohalides as lead-free materials for photovoltaic and optoelectronic applications using density functional theory (DFT) calculations. Increasing Bi content from 0.5 to 0.6 reduces the bandgap from 1.60 to 1.43 eV, enhancing the light absorption and aligning with the optimal range for solar energy conversions. Structural analysis reveals that higher Bi substitution expands the lattice, reduces the hole effective mass, and improves the hole mobility, while the electron mobility decreases slightly. Sb0.4Bi0.6SeI demonstrates quasi-direct bandgap characteristics attributed to Bi-induced lattice distortion and strong spin–orbit coupling (SOC), which reduces the conduction band minimum and facilitate direct-like electronic transitions. Enhanced absorption near the band edge and localized states contribute to higher sub-bandgap absorption, broadening the spectral response. Reduced bandgap falls within the optimal range for single-junction solar cells, increasing photocurrent generation. While defect-induced recombination poses challenges, passivation and compositional tuning can optimize its performance. This study identifies the potential of Sb0.4Bi0.6SeI as a versatile absorber material in emerging solar cell architectures. The findings provide a pathway toward designing cost-effective and sustainable materials with tailored properties for next-generation photovoltaic and optoelectronic technologies.